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Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

Published online by Cambridge University Press:  10 February 2011

Akira Nishiyama ,
Osamu Arisumi  and
Makoto Yoshimi
Akira Nishiyama
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R & D Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yohohama 235, Japan
Osamu Arisumi
Affiliation:
Microelectronics Engineering Laboratories, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yohohama 235, Japan
Makoto Yoshimi
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R & D Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yohohama 235, Japan
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Abstract

N+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 69
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Yoshimi, M., Takahashi, M., Wada, T., Kato, K., Kambayashi, S., Kemmochi, M. and Natori, K., IEEE Trans. Electron Devices, Vol. 37, No. 9, p. 2015, 1990.Google Scholar
[2] Kato, K., Wada, T. and Taniguchi, K., IEEE Trans. Electron Devices, Vol. 37, No. 2, p. 458, 1985.Google Scholar
[3] Yoshimi, M., Terauchi, M., Murakoshi, A., Takahashi, M., Matsuzawa, K., Shigyo, N. and Ushiku, Y., Technical Digest of IEDM 1994, p. 429.Google Scholar
[4] Nishiyama, A., Arisumi, O., Terauchi, M., Takeno, S., Suzuki, K., Takakuwa, C. and Yoshimi, M., Jpn. J. Appl. Phys., Vol. 35, No. 2B, 954, 1996.Google Scholar
[5] Aketagawa, K., Tatsumi, T. and Sakai, J., J. Cryst. Growth, Vol. 111, No. 1–4, 860, 1991.Google Scholar
[6] Poortmans, J., Mertens, R.P., Jain, S.C., Nijs, J. and van Overstraeten, R., 19th European Solid State Devices Research Conf., 807, 1989.Google Scholar
[7] van de Walle, G.F.A., van Ijzendoorn, L.J., van Gorkum, A.A., van den Heuve, R.A., Theunissen, A.M. and Gravesteijn, D.J., Thin Solid Films, Vol. 183, No. 1, 183, 1989.Google Scholar
[8] Borg, R.B. and Dones, G.J., An Introduction to Solid State Diffusion, Academic Press, New York, 1990.Google Scholar
[9] Sze, S.M., Physics of Semiconductor devices (2nd edition), A Wiley-Interscience Publication, 1981.Google Scholar
[10] Sasaki, K., Miyajima, T., Kubota, Y. and Furukawa, S., IEEE Trans. Electron Devices, Vol. 39, No. 9. 2132, 1992.Google Scholar
[11] del Amalo, J.A., Swanson, R.M., IEEE Tran. Electron Devices, Vol. 34, No. 7, 1580, 1989.Google Scholar
[12] Swirhun, S.E., Kwark, Y. and Swanson, R.M., Technical Digest of IEDM 1986, p. 24.Google Scholar
[13] Weaver, H.T. and Nasby, R.D., IEEE Trans. Electron Devices, Vol. 28, No. 5, 465, 1981.Google Scholar
[14] Nishiyama, A., Arisumi, O. and Yoshimi, M., IEEE Trans. Electron Devices vol. 44, No. 12, 2187, 1997.Google Scholar