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Electrical Instabilities and 1/f Noise in Organic Pentacene Thin Film Transistors

Published online by Cambridge University Press:  21 March 2011

P. V. Necliudov ,
M. Shur ,
D. J. Gundlach  and
T. N. Jackson
P. V. Necliudov
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Electrical, Computer and System Engineering, Troy, NY;
M. Shur
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Electrical, Computer and System Engineering, Troy, NY;
D. J. Gundlach
Affiliation:
Pennsylvania State University, Dept. of Electrical Engineering, University Park, PA.
T. N. Jackson
Affiliation:
Pennsylvania State University, Dept. of Electrical Engineering, University Park, PA.
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Abstract

We report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 660: Symposia JJ – Organic Electronic & Photonic Materials and Devices , 2000 , JJ7.10
Copyright
Copyright © Materials Research Society 2001

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References

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