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Electrical Damage Introduced in GaAs by Reactive Ion Etching using CH4/H2 mixture

Published online by Cambridge University Press:  26 February 2011

P. Collot ,
C. Gaonach  and
N. Proust
P. Collot
Affiliation:
THOMSON CSF LCR BP10 91401 Orsay cedex FRANCE
C. Gaonach
Affiliation:
THOMSON CSF LCR BP10 91401 Orsay cedex FRANCE
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Abstract

Electrical characterizations (I–V,C–V) of TiPtAu/n-type GaAs Schottky diodes were performed in order to investigate the electrical damage introduced by CH4JH2 RIE. The effective barrier height measured according to the thermionic conduction model decreases from 0.79 eV to 0.53 eV after RIE carried out at 1.3 W/cm2.

Recovery of the control I–V characteristics requires a wet chemical removal of 50 nm of the dry etched surface.

Doping profiles, derived from conventional C–V analysis at 80 K and 300 K, show a decrease in free carrier concentration within 500 nm from the surface. Hall measurementsbetween 4 K and 300 K show an increase in carrier mobility after RIE. These effects are essentially attributable to chemical neutralization of the silicon dopants by hydrogen. Thermal annealing at 360°C leads to an almost complete recovery of the electrical activity and of the control Schottky barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 507
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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