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Electrical Contacts to Metastable GexSi1−x Using Pd2Si as a Transport Layer

Published online by Cambridge University Press:  25 February 2011

Richard G. Purser ,
Jay W. Strane  and
James W. Mayer
Richard G. Purser
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Jay W. Strane
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
James W. Mayer
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
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Abstract

The transport of germanium through a co-deposited palladium-silicon layer on epitaxially grown GexSi1−x on Si(100) was studied. The Ge concentration in the UHV-CVD grown GexSi1−x film was x=.14 with a thickness of 155 nm. When the co-deposited layer is Pd rich with respect to Pd2Si, Ge was found to move through the Pd-Si layer and grow polycrystalline on the GexSi1−x. Ge transport and Pd2Si(111) grain growth ceased simultaneously. No transport was found for Si rich Pd-Si layers. Electrical characterization showed the contacts were ohmic with a specific contact resistivity between 6–12 μωQ-cm2 and an end resistance of.75 ω, resulting in a carrier concentration under the contact of 1.5×1014 cm−2. Hall effect measurements of the semiconductor gave n=5.77×1014 cm−2 and μ=36.96 cm−2/Vs. The sheet resistance of the contact layer was found to be 23.54 ω/square and the semiconductor was 237 ω/square.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 635
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Canali, C., Mayer, J. W., Ottaviani, G., Sigurd, D. and van der Weg, W., Appl. Phys. Lett, 25, pp. 3, (1974)Google Scholar
2. Thompson, R. D., Tu, K. N., Angillelo, J., Delage, S., and Iyer, S. S., J. Electrochemical Society, 135, 3161 (1988)Google Scholar
3. Buxbaum, A., Eizenberg, M., Raizman, A., Schaffler, F., Appl. Phys. Lett., 59, pp. 665 (1991)Google Scholar
4. The UHV-CVD GexSi1−x was grown by Bernard Meyerson of IBM.Google Scholar
5. Schroeder, D., Semiconductor Material and Device Characterization, Wiley, New York, pp. 104–130, (1990)Google Scholar
6. Buckley, W. D. and Moss, S. C., Solid State Electron. 15, 1331 (1972)Google Scholar
7. JCPDF card #6–559Google Scholar