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Electrical Conductivity of Pure and Doped Nanocrystalline Cerium Oxide

Published online by Cambridge University Press:  10 February 2011

E. B. Lavik  and
Y.-M. Chiang
E. B. Lavik
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Y.-M. Chiang
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have previously shown that dense nanocrystalline CeO2−x of approximately 10 nm grain size exhibits enhanced electrical conductivity and an enthalpy of reduction that is more than 2.4 eV lower than that for conventional ceria [1, 2]. These effects were attributed to preferential interface reduction. In this work, we investigated the relationship between interfacial area, heat treatment conditions, and conductivity by varying the grain size of dense samples through annealing at various temperatures. It is shown that the conductivity does not scale in direct proportion to interfacial area. Moderate temperature (700 °C) anneals which change the grain size by only a few nanometers reduce the conductivity by three orders of magnitude. It is suggested that atomistic relaxation occurs at the interfaces, and eliminates many low energy defect sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 457: Symposium V – Nanophase and Nanocomposite Materials II , 1996 , 63
Copyright
Copyright © Materials Research Society 1997

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References

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