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Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Brian R. Stoner ,
Jesko A. von Windheim  and
Jeffrey T. Glass
Brian R. Stoner
Affiliation:
North Carolina State University, Department of Materials Science, Raleigh, NC 27695-7919; Danny Zoltan and Jan W. Vandersande, Jet Propulsion Laboratory, Pasadena, CA 91109
Jesko A. von Windheim
Affiliation:
North Carolina State University, Department of Materials Science, Raleigh, NC 27695-7919; Danny Zoltan and Jan W. Vandersande, Jet Propulsion Laboratory, Pasadena, CA 91109
Jeffrey T. Glass
Affiliation:
North Carolina State University, Department of Materials Science, Raleigh, NC 27695-7919; Danny Zoltan and Jan W. Vandersande, Jet Propulsion Laboratory, Pasadena, CA 91109
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Abstract

Electrical conductivity measurements were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000 °C to gain a better understanding of the CVD growth process and the resulting electrical properties of the diamond film's. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, and this is attributed to decreasing hydrogen incorporation efficiencies at further distances from the plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 413
Copyright
Copyright © Materials Research Society 1992

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References

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