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Electrical characterization using Scanning Capacitance Microscopy of the local electronics properties of Ge semiconductor nanostructures.

Published online by Cambridge University Press:  01 February 2011

G. Brémond ,
J. J. Marchand ,
A. Descamps ,
P. Budau ,
F. Bassani ,
A. Ronda ,
I. Berbezier ,
T. Stoïca  and
L. Vescan
G. Brémond
Affiliation:
Laboratoire de la Physique de la Matière (UMR 5511) INSA-Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
J. J. Marchand
Affiliation:
Laboratoire de la Physique de la Matière (UMR 5511) INSA-Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
A. Descamps
Affiliation:
Laboratoire de la Physique de la Matière (UMR 5511) INSA-Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
P. Budau
Affiliation:
Laboratoire de la Physique de la Matière (UMR 5511) INSA-Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
F. Bassani
Affiliation:
Laboratoire Matériaux et Microélectronique de Provence (UMR CNRS 6117)- Université d'Aix-Marseille, Technopôle de Château – Gombert, 13451 Marseille Cedex 20
A. Ronda
Affiliation:
Laboratoire Matériaux et Microélectronique de Provence (UMR CNRS 6117)- Université d'Aix-Marseille, Technopôle de Château – Gombert, 13451 Marseille Cedex 20
I. Berbezier
Affiliation:
Laboratoire Matériaux et Microélectronique de Provence (UMR CNRS 6117)- Université d'Aix-Marseille, Technopôle de Château – Gombert, 13451 Marseille Cedex 20
T. Stoïca
Affiliation:
Ungszentrum Juelich GmbH, Institut für Schichten und Grenzflächen, ISG-1, D-52425 Juelich, Germany
L. Vescan
Affiliation:
Ungszentrum Juelich GmbH, Institut für Schichten und Grenzflächen, ISG-1, D-52425 Juelich, Germany
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Abstract

Ge nanocrystals embedded in SiO2 via a low temperature thermal oxidation of a Si/Ge/Si stack structure grown by low pressure chemical vapour deposition or by molecular beam epitaxy in localized focalized ion beam nanopatterns are characterized by scanning capacitance microscopy. Local electrical spectroscopy on the Ge structure shows hole or electron charging by the Ge nanocrystal, thanks to the complete electrical isolation induced by the oxidation process. The scanning capacitance microscope allows measuring the discharging kinetics of the electron, giving an order of the retention time value of several hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 838: Symposium O – Scanning Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials , 2004 , O10.12
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Likharev, K.K., Nanotechnology 10, 159 (1999)Google Scholar
2. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbé, A.F., Chan, K., Appl. Phys. Lett. 68, 1377 (1996)Google Scholar
3. Hanafi, H.I, Tiwari, S., IEEE Trans. Electron Dev. 43, 1553 (1996)Google Scholar
4. Shi, et al, J. Appl. Phys. 84, 2358 (1999)Google Scholar
5. Wahl, J.A., Silva, H., Gokirmak, A., Kumar, A., Welser, J.J., Tiwari, S.,, in Electron Devices Meeting, 1999. IEDM Technical Digest. International, Washington DC, 375 (1999)Google Scholar
6. Craciun, V.; Reader, A.H.; Vandenhoudt, D.E.W.; Best, S.P.; Hutton, R.S.; Andrei, A.; Boyd, I.W., Thin Solid Films 255, 290 (1995)Google Scholar
7. Williams, C.C., Hough, W. P., and Rishton, S. A., Appl. Phys. Lett. 55, 203 (1989)Google Scholar
8. Jacobs, H.O., Leuchtmann, P., Homan, O. J., and Stemmer, A., J. Appl. Phys. 84, 1168 (1998)Google Scholar