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Electrical Characterization of Vacuum Deposited and Solution Processed DH4T Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Tobias Muck ,
Michael Leufgen ,
Amira Lebib ,
Tanja Borzenko ,
Jean Geurts ,
Georg Schmidt ,
Laurens W. Molenkamp ,
Veit Wagner  and
Henrique L. Gomes
Tobias Muck
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Michael Leufgen
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Amira Lebib
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Tanja Borzenko
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Jean Geurts
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Georg Schmidt
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Laurens W. Molenkamp
Affiliation:
Experimentelle Physik III, Physikalisches Institut, Universität Würzburg 97074 Würzburg, Germany
Veit Wagner
Affiliation:
School of Engineering and Science, International University Bremen 28759 Bremen, Germany
Henrique L. Gomes
Affiliation:
Universidade de Algarve, Campus de Gambelas, FCT, 8000 Faro, Portugal
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Abstract

We present organic field-effect transistors with dihexylquaterthiophene (DH4T) as active material, a derivative of the oligothiophene á-4T with two hexyl chains as end groups. This substitution makes this molecule suitable not only for vacuum sublimation but also for solution processing which enables cheaper production. Additionally, the layer ordering is improved. We compare vacuum deposited and solution processed OFETs based on DH4T. The former ones show nearly ideal I-V characteristics. The latter ones show deviations from ideal behavior and lower currents. Furthermore, temperature dependent measurements of drain-source current in vacuum deposited DH4T-OFETs shows an unusual variation of the OFET apparent mobility. These apparent changes in mobility are caused by a threshold voltage shift, which becomes pronounced at around 290 K

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L10.3
Copyright
Copyright © Materials Research Society 2003

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