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Electrical Characterization of Sige Thin Films

Published online by Cambridge University Press:  15 February 2011

J. A. Mccormack  and
J.-P. Fleurial
J. A. Mccormack
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology 4800 Oak Grove Dr., Pasadena, CA 91109
J.-P. Fleurial
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology 4800 Oak Grove Dr., Pasadena, CA 91109
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Abstract

An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 135
Copyright
Copyright © Materials Research Society 1991

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References

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