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Electrical Characterization of Passivation Processes in Si-GaAs by Isothermal Photoinduced Transient Measurements

Published online by Cambridge University Press:  22 February 2011

R. Dkiouak ,
J. Macia ,
A. Perez-Rodriguez ,
J. Gual  and
J.R. Morante
R. Dkiouak
Affiliation:
Serveis Cientifico-Tècnics, Universitat de Barcelona, C/ Martí Franqués s/n, 08028 Barcelona, Spain
J. Macia
Affiliation:
Serveis Cientifico-Tècnics, Universitat de Barcelona, C/ Martí Franqués s/n, 08028 Barcelona, Spain
A. Perez-Rodriguez
Affiliation:
Serveis Cientifico-Tècnics, Universitat de Barcelona, C/ Martí Franqués s/n, 08028 Barcelona, Spain
J. Gual
Affiliation:
Serveis Cientifico-Tècnics, Universitat de Barcelona, C/ Martí Franqués s/n, 08028 Barcelona, Spain
J.R. Morante
Affiliation:
LCMM, Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645-647, 08028 Barcelona, Spain
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Abstract

The analysis of SI-GaAs passivated with different plasma treatments by isothermal PITS measurements shows the ability of this technique for the characterization of the electrical effects of the surface treatments. PITS spectra show, in addition to a midgap level assigned to EL2, a non exponential peak which strongly depends on the passivation process. This is related to the generation of defects during the surface processing, likely through the presence of interaction processes involving mid-gap related levels. The comparison between the spectra with different passivation conditions suggests the presence of ionized species in the plasma treatment and the fast growth rate of the passivation layer to determine a higher generation of these process related defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 501
Copyright
Copyright © Materials Research Society 1993

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References

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