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Electrical Characterization of Ferroelectric Thin Films of Lithium Niobate on Silicon Substrates

Published online by Cambridge University Press:  16 February 2011

Robert C. Baumann ,
Timothy A. Rost  and
Thomas A. Rabson
Robert C. Baumann
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
Timothy A. Rost
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
Thomas A. Rabson
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
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Abstract

Thin films (.1-.6 μm) of LiNbO3 have been deposited on silicon substrates by rf reactive sputtering. MFS (metal-ferroelectric-semiconductor) capacitor structures were created by a liftoff process which physically isolated small areas of LiNbO3. Standard MOS (metal-oxide-semiconductor) electrical characterization techniques were used to determine the resistivity and dielectric constant of the films. Short-circuit photocurrent measurements revealed both transient and steady state components attributed to a pyroelectric effect and a bulk photovoltaic effect respectively. The conduction processes in these films were examined and found to exhibit Frenkel-Poole characteristics. Ferroelectric switching at room temperature has also been observed in these films, however, the reversed orientation was not stable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 31
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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