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Electrical Characterization of Electrochemically Grown ZnO Nanorods using STM

Published online by Cambridge University Press:  25 April 2012

Yuji Suzuki
Affiliation:
London Centre for Nanotechnology, University College London, London WC1H 0AH, UK.
Bright Ibheanacho
Affiliation:
University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Arman Ahnood
Affiliation:
London Centre for Nanotechnology, University College London, London WC1H 0AH, UK.
Poopathy Kathirgamanathan
Affiliation:
School of Engineering, Wolfson Centre, Brunel University, Middlesex UB8 3PH, UK.
William Wong
Affiliation:
University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Arokia Nathan
Affiliation:
Department of Engineering, Cambridge University, Cambridge CB3 0FA, UK.
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Abstract

ZnO nanorods were grown homogenously and vertically on ITO using electrochemical techniques. The physical properties of the nanorods were characterized using SEM and optical absorption. The electrical conductivity, deduced using STM at different tip heights, and was found to be 20 Ω-cm with a carrier concentration of 3x1015 cm-3.The results show that electrochemically grown ZnO nanorods have electrical properties suitable for use in electronic devices such as solar cells and transistors. A-Si:H p-i-n solar cells were then deposited after the fabrication on the ZnO on ITO-coated substrates. The results show that the textured solar cell performance was 30% higher than the planar solar cell.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

1. Xu, F. and Sun, L., Energy & Environmental Science 4, no. 3 (2011): 818.Google Scholar
2. Zhou, H., Colli, A., Ahnood, A., Yang, Y., Rupesinghe, N., Butler, T., Haneef, I., Hiralal, P., Nathan, A., Amaratunga, G.A.J., Adv. Materials, 21, 3839, 3919-3923, (2009)Google Scholar
3. Pradhan, D. and Tong Leung, K., Langmuir 24, no. 17 (2008): 97079716.Google Scholar
4. Srikant, V. and Clarke, D. R., Journal of Applied Physics 81 (1997): 6357.Google Scholar
5. Uher, C., Hockey, R. L., and Ben-Jacob, E., Phys Rev B 35 (1987) 44834488 Google Scholar
6. Paulson, S., Helser, A., Nardelli, M. B, Taylor, R. M., Falvo, M., Superfine, R., Washburn, S., Science 290, (2000) 17421744 Google Scholar
7. Schlenker, E., Bakin, A., Postels, B., Mofor, A. C., Wehmann, H.-H., Weimann, T., Hinze, P., and Waag, A., Phys. Stat. Sol. B 244, (2007) 14731477 Google Scholar
8. Heo, Y. W., Tien, L. C., Norton, D. P., Kang, B. S., Ren, F., Gila, B. P., Peartona, S. J., Appl Phys Lett 85, (2004) 20022004 Google Scholar
9. Ma, Y.-J., Zhang, Z., Zhou, F., Lu, L., Jinand, A. Gu, C., Nanotechnology 16 (2005) 746749 Google Scholar
10. Li, Q.H., Wan, Q., Liang, Y.X., and Wang, T.H., Appl Phys Lett 84, (2004) 45564558 Google Scholar
11. Díaz-Guerra, C. and Piqueras, J., “ Journal of Applied Physics, vol. 86, no. 4, p. 1874, Aug. 1999.Google Scholar
12. Hegedus, S. S. and Shafarman, W. N., Research and Applications, vol. 12, no. 2-3, pp. 155176, Mar. 2004.Google Scholar
13. Dewan, R. and Knipp, D., Journal of Applied Physics, vol. 106, no. 7, p. 074901, Oct. 2009.Google Scholar