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Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

Published online by Cambridge University Press:  01 February 2011

M. Ahoujja ,
H. C. Crocket ,
M. B. Scott ,
Y.K. Yeo  and
R. L. Hengehold
M. Ahoujja
Affiliation:
Department of Physics, University of Dayton, Dayton, OH, USA
H. C. Crocket
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
M. B. Scott
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
Y.K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
R. L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
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Abstract

We report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.37
Copyright
Copyright © Materials Research Society 2003

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