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Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  10 February 2011

P.N.K. Deenapanray ,
F.D. Auret ,
M.C. Ridgway ,
S.A. Goodman  and
G. Myburg
P.N.K. Deenapanray
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, ACT [email protected]
F.D. Auret
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, ACT [email protected]
S.A. Goodman
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002
G. Myburg
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002
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Abstract

We report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 519
Copyright
Copyright © Materials Research Society 1998

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References

1. Mullins, F.H. and Brunnschweiler, A., Solid-State Electron. 19, 47 (1976).Google Scholar
2. Fonash, S.J., Ashok, S. and Singh, R., Appl. Phys. Lett. 39, 423 (1981).Google Scholar
3. Burger, N., Thonke, K., Sauer, R. and Pensl, G., Phys. Rev. Lett. 52, 1645 (1984).Google Scholar
4. Weber, J., Physica B 170, 201 (1991).Google Scholar
5. Estreicher, S.K., Weber, J., Derecskei-Kovacs, A. and Marynick, D.S., Phys. Rev. B 55, 5037 (1997).Google Scholar
6. Estreicher, S.K., Hastings, J.L. and Fedders, P.A., Appl. Phys. Lett. 70, 432 (1997).Google Scholar
7. Brotherton, S.D. and Bradley, P., J. Appl. Phys. 53, 5720 (1982).Google Scholar
8. Kimerling, L.C., Asom, M.T., Benton, J.L., Drevinsky, P.J., and Caefer, C.E., Materials Science Forum 38–41, 141 (1989).Google Scholar
9. Schröter, W., Kronewitz, J., Gnauert, U., Riedel, F. and Seibt, M., Phys. Rev. B 52, 13726 (1995).Google Scholar
10. Abdullin, Kh.A., Mukashev, B.N., Tamendarov, M.F., and Tashenov, T.B., Mat. Res. Soc. Symp. Proc. 262, 1109 (1992).Google Scholar
11. Deenapanray, P.N.K., Auret, F.D. and Ridgway, M.C., submitted to J. Appl. Phys.Google Scholar
12. Lalita, J., Svensson, B.G. and Jagadish, C., Nucl. Instrum. Methods B 96, 210 (1995).Google Scholar