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Electrical Characteristics of Thermal Spray Silicon Coatings

Published online by Cambridge University Press:  10 February 2011

S.Y. Tan ,
R.J. Gambino ,
R. Goswami ,
S. Sampath  and
H. Herman
S.Y. Tan
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, 11794-2275
R.J. Gambino
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, 11794-2275
R. Goswami
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, 11794-2275
S. Sampath
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, 11794-2275
H. Herman
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, 11794-2275
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Abstract

Polycrystalline silicon deposits were formed on a monocrystalline silicon substrate by thermal spraying. The resulting structure exhibits a device characteristic. Pressure-induced transformations of silicon, namely, Si-III (BC-8) and Si-IX are identified by X-ray diffraction in a Si-I matrix on deposits formed by vacuum plasma spray. The presence of the Si-III and Si-IX indicates that the pressure-quenched silicon deposit is highly conductive, as determined by four-point van der Pauw resistivity measurement. Hall mobility measurements, combined with photoconductivity results, indicate that the highly conductive silicon deposit displays the same range of mobility as a polycrystalline deposit containing only Si-I. The silicon deposit, with or without metastable phases, displays the same photoconductivity properties. The silicon deposit on a monocrystalline silicon substrate exhibits rectifying I–Vcharacteristics, possibly caused by band bending of trapping states associated with impurities segregating at the polycrystalline deposit/monocrystalline substrate interface

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 624: Symposium V – Materials Development for Direct Write Technologies , 2000 , 189
Copyright
Copyright © Materials Research Society 2000

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References

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