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Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs

Published online by Cambridge University Press:  10 February 2011

Byung-Hyuk Min  and
Jerzy Kanicki
Byung-Hyuk Min
Affiliation:
Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
Jerzy Kanicki
Affiliation:
Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
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Abstract

A new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 137
Copyright
Copyright © Materials Research Society 1997

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References

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