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Electrical Characteristics of High Pressure Nitrided Oxides

Published online by Cambridge University Press:  28 February 2011

J.P. Ellul ,
S.P. Tay  and
A. Kalnitsky
J.P. Ellul
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
S.P. Tay
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
A. Kalnitsky
Affiliation:
Northern Telecom Electronics Limited, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
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Abstract

In this paper, we present preliminary electrical characteristics of as-grown and NH3-nitrided thin gate and polysilicon oxides. Material characteristics are discussed in terms of ammonia concentration and nitridation temperature and pressure. Dielectric thicknesses obtained by ellipsometry, by Auger analysis and by capacitance-voltage measurements are compared. Electrical breakdown statistics for 10 atm and 1 atm pressure nitrided oxides are compared to as-grown thermal oxides.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 493
Copyright
Copyright © Materials Research Society 1986

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References

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