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Electrical Characteristics of Chemical Solution Deposited Nd3+ Doped PZT (53/47) Thin Films in Planar Electrode Configuration

Published online by Cambridge University Press:  21 March 2011

S.B. Majumder ,
B. Perez ,
B. Roy ,
A. Martinez  and
R.S. Katiyar
S.B. Majumder
Affiliation:
PO Box 23343, Department of Physics, University of Puerto Rico San Juan, PR 00931, USA
B. Perez
Affiliation:
PO Box 23343, Department of Physics, University of Puerto Rico San Juan, PR 00931, USA
B. Roy
Affiliation:
PO Box 23343, Department of Physics, University of Puerto Rico San Juan, PR 00931, USA
A. Martinez
Affiliation:
PO Box 23343, Department of Physics, University of Puerto Rico San Juan, PR 00931, USA
R.S. Katiyar
Affiliation:
PO Box 23343, Department of Physics, University of Puerto Rico San Juan, PR 00931, USA
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Abstract

Electrical characteristics of ferroelectric thin films in planar electrode configuration are important to characterize these materials for their applications in micro electro mechanical (MEM) and tunable microwave devices. In the present work we have prepared polycrystalline Pb1划3x/2Ndx(Zr0.53Ti0.47)O3 (x = 0.0 to 10.0 at %) thin films on platinized silicon substrate by chemical solution deposition (CSD) technique. The films were characterized in terms of their dielectric and ferroelectric properties by depositing planar interdigital finger electrodes on the surface of the films by electron beam lithography. The capacitance and loss tangent of undoped and 4 at % Nd doped PZT films measured at 100 kHz were found to be 138 pF, 0.033 and 95 pF, 0.019 respectively. Saturated hysteresis loops were obtained in undoped PZT film by applying 100 V across 10 μm electrode separation. Nd doped PZT films on the other hand, electrically shorted at comparatively lower voltage. The electrical characteristics of these films are correlated with their phase formation behavior and microstructural features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC12.14.1
Copyright
Copyright © Materials Research Society 2001

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