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Electrical Characterisation of a Low-Density Layer of SnO Nanowires Deposited on a Set of Parallel Pt Electrodes

Published online by Cambridge University Press:  01 February 2011

Ilia Kiselev ,
Ilia Kiselev ,
Victor Sysoev  and
Thomas Schneider
Ilia Kiselev
Affiliation:
[email protected], Forschungszentrum Karlsruhe, Institute of Microstructure Technology, Hermann-von-Helmholtz-Platz 1, Karlsruhe, D-76344, Germany, +49-7247-82-3435, +49-7247-82-6667
Ilia Kiselev
Affiliation:
[email protected] , Forschungszentrum Karlsruhe, Institute of Microstructure Technology, Hermann-von-Helmholtz-Platz 1, Karlsruhe, D-76344, Germany
Victor Sysoev
Affiliation:
[email protected], Saratov State Technical University, Physics Department, Polytechnicheskaya 77, Saratov, 410054, Russian Federation
Thomas Schneider
Affiliation:
[email protected], Forschungszentrum Karlsruhe, Institute of Microstructure Technology, Hermann-von-Helmholtz-Platz 1, Karlsruhe, D-76344, Germany
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Abstract

Low-density layers of SnO2 nanowires were produced using the vapor solid method and dry-pressed onto surface-oxidized Si-substrates equipped with a set of 39 parallel Pt-electrodes. Current-Voltage (I-V) characteristics of the segments between the electrodes were measured in ambient air at a substrate temperature of 300°C. Statistical analysis of the 38 I-V characteristics allows drawing conclusions, that only Schottky contacts between large nanowires and electrodes are significant for conductometry, and that they have very similar barrier characteristics. The statistical approach and its advantages are demonstrated. The clarity obtained concerning the roles of different resistivity mechanisms involved enables predictions of the nanowire net device behavior in applications, which is demonstrated on an instance of long-term stability examination of gas sensor arrays.

Keywords

nanostructureelectrical propertiessensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O15-01
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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