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Electrical and Structural Characterization of the Interface of Wafer Bonded InP/Si

Published online by Cambridge University Press:  02 August 2011

A. Fontcuberta i Morral ,
J. M. Zahler ,
Harry A. Atwater ,
M. M. Frank ,
Y. J. Chabal ,
P. Ahrenkiel  and
M. Wanlass
A. Fontcuberta i Morral
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
J. M. Zahler
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
M. M. Frank
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, NJ 08854, U.S.A.
Y. J. Chabal
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, NJ 08854, U.S.A.
P. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401-3393, U.S.A.
M. Wanlass
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401-3393, U.S.A.
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Abstract

A study of the interfacial properties of wafer bonded InP/Si is presented. The electrical properties are measured by bonding InP to Si with different doping concentrations and by measuring the current voltage characteristics of the bonded pairs. Two different kinds of structures are studied: 1) n+InP doped to 3×1018 cm-3 bonded with n+Si doped to 1×1019 cm-3, and 2) n+InP doped to 3×1018 cm-3 bonded with p-Si doped to 6×1014 cm-3. After a 350°C anneal, structure 1 shows low resistive ohmic behavior while structure 2 is rectifying due to its higher sensitivity to interfacial chemistry. Indeed, both the reverse and forward current are reduced by annealing in structure 2, suggesting the formation of an interfacial barrier during annealing. This hypothesis is supported by High Resolution Transmission Electron Microscopy combined with Fourier Transform Infrared Spectroscopy, which indicate the formation of an amorphous interfacial oxide from the reaction of adsorbed water trapped at the InP/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G2.4
Copyright
Copyright © Materials Research Society 2003

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References

1 Sharps, P. R., Timmons, M.L., Hills, J.S., Gray, J.L., 26th IEEE PVSC (1997)Google Scholar
2 Morral, A. Fontcuberta i, Zahler, J. M., Ahrenkiel, S. P., Wanlass, M., Atwater, Harry A., submitted to Appl. Phys. Lett.Google Scholar
3 Chabal, Y. J., Christman, S. B., Evidence Phys. Rev. B 29, 6974 (1984)Google Scholar
4 Frank, M. M., Chabal, Y.J., Wilk, G. D., Mat. Res. Soc. Symp. Proc. 745, N. (2003)Google Scholar
5 Pluchery, O., Eng, J. Jr, Opila, R. L., Chabal, Y. J., Surf. Sci. 502-503, 75 (2002).Google Scholar