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Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

Published online by Cambridge University Press:  01 February 2011

D. J. As ,
D. G. Pacheco-Salazar ,
S. Potthast  and
K. Lischka
D. J. As
Affiliation:
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100, D-33095 Paderborn, Germany, [email protected]
D. G. Pacheco-Salazar
Affiliation:
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100, D-33095 Paderborn, Germany, [email protected]
S. Potthast
Affiliation:
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100, D-33095 Paderborn, Germany, [email protected]
K. Lischka
Affiliation:
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100, D-33095 Paderborn, Germany, [email protected]
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Abstract

P-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3 and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1 was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y8.2
Copyright
Copyright © Materials Research Society 2004

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References

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