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Electrical and Microstructural Characteristics of Ti Contacts on (001)Si

Published online by Cambridge University Press:  25 February 2011

H. R. Liauh ,
M. C. Chen ,
J. F. Chen  and
L. J. Chen
H. R. Liauh
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
M. C. Chen
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
J. F. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
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Abstract

An investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of poly crystalline silicides compared with that in Ti/p+-Si samples with BF2+ implantation. The variations of Schottky barrier height, contact resistance and junction leakage current were correlated with microstrucxtural changes. The influences of the formation of amorphous interlayer between Ti and Si on the elctrical characteristics are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 635
Copyright
Copyright © Materials Research Society 1992

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