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Electrical and Magnetic Properties of Doped ZnO Nanowires

Published online by Cambridge University Press:  01 February 2011

Gennady N Panin ,
Andrey N. Baranov ,
Tae Won Kang ,
Oleg V. Kononenko ,
Sergey V. Dubonos ,
S. K. Min  and
H. J. Kim
Gennady N Panin
Affiliation:
[email protected], QSRC, Dongguk University, Physics, 3-26, Pil-dong, Chung-gu, Seoul, 100-715, Korea, Republic of, 82-02-22603950
Andrey N. Baranov
Affiliation:
[email protected], Moscow State University, Department of Chemistry, Moscow, 119992, Russian Federation
Tae Won Kang
Affiliation:
[email protected], Dongguk University, QSRC, Department of Physics, 3-26 Pil-dong, Chung-gu, Seoul, 100-715, Korea, Republic of
Oleg V. Kononenko
Affiliation:
[email protected], Inst. of Microelectronics Technology, RAS, Chernogolovka, Moscow distr., 142432, Russian Federation
Sergey V. Dubonos
Affiliation:
[email protected], Inst. of Microelectronics Technology, RAS, Chernogolovka, Moscow distr., 142432, Russian Federation
S. K. Min
Affiliation:
[email protected], Dongguk University, Department of Semiconductors, Seoul, 100-715, Korea, Republic of
H. J. Kim
Affiliation:
[email protected], Dongguk University, Department of Semiconductors, Seoul, 100-715, Korea, Republic of
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Abstract

ZnO nanowires doped with Mn, Fe, Sn, and Li during the thermal growth following direct chemical synthesis were investigated using electric and magnetic measurements. Current-voltage characteristics of individual nanowires configured as a two-terminal device with Al electrodes show apparent rectify behavior indicating the Schottky-like barrier formation and resistivity being less 3 Ω·cm. Reproducible resistance modulation by a dc voltage at room temperature is observed. Magnetic susceptibility of the doped nanowires as a function of temperature demonstrates Curie–Weiss behavior. Magnetization versus field curves show hysteresis with the coercive field of about 200 Oe. The spatially-resolved magnetic force measurements of individual nanowires revealed the magnetic domain structure. The domains align perpendicular to c-axis and can be polarized in the external magnetic field.

Keywords

magneticsemiconductingnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K04-06
Copyright
Copyright © Materials Research Society 2007

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References

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