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Electrical and Electronic Properties of Grain Boundaries in Silicon

Published online by Cambridge University Press:  22 February 2011

Hans J. Queisser  and
Jorgen H. Werner
Hans J. Queisser
Affiliation:
Max–Planck–Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany
Jorgen H. Werner
Affiliation:
Max–Planck–Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

The electronic states at silicon grain boundaries trap preferentially majority carriers, thus cause a potential barrier impeding current flow. We here summarize measurement techniques for the energy distribution of these grain boundary traps. The analysis reveals band tails due to disorder in the boundary plane as well as interface state continua at midgap. The spatial distribution of trapped charges results in significant electrostatic potential fluctuations which are observable in ac-admittance and noise experiments; the charge fluctuations cause in particular 1/f-like noise. The naive model of dangling bonds to describe grain boundary charges is insufficient, impurity atoms, especially oxygen, play essential roles in determining electronic behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 53
Copyright
Copyright © Materials Research Society 1988

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References

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