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Electrical and Electrochemical Properties of a-C:N:H Films

Published online by Cambridge University Press:  10 February 2011

Yu.V. Pleskov ,
M.D. Krotova ,
V.I. Polyakov ,
A.V. Khomich ,
A.I. Rukovishnikov ,
B.L. Druz  and
I. Zaritskiy
Yu.V. Pleskov
Affiliation:
Frumkin Institute of Electrochemistry, Leninsky prospect 31, Moscow 117071, Russia, [email protected]
M.D. Krotova
Affiliation:
Frumkin Institute of Electrochemistry, Leninsky prospect 31, Moscow 117071, Russia, [email protected]
V.I. Polyakov
Affiliation:
Institute of Radio Eng. & Electronics, Mohovaya 11, Moscow 103907, Russia, [email protected]
A.V. Khomich
Affiliation:
Institute of Radio Eng. & Electronics, Mohovaya 11, Moscow 103907, Russia, [email protected]
A.I. Rukovishnikov
Affiliation:
Institute of Radio Eng. & Electronics, Mohovaya 11, Moscow 103907, Russia, [email protected]
B.L. Druz
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, [email protected]
I. Zaritskiy
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, [email protected]
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Abstract

Electrochemical impedance in H2SO4 solutions and kinetics of redox reactions in the Fe(CN)63-/4- system were studied on amorphous nitrogenated diamond-like carbon (a-C:N:H) thin-film electrodes. Parameters of point defects (trapping centers) were also measured by the Deep Level Transient Spectroscopy techniques. The films have been fabricated on p- and i-type silicon and quartz substrates, using direct ion beam deposition from an RF inductively coupled N2+ CH4 plasma source. The increase in N2/CH4 ratio in the gas mixture lead to a decrease in the electrical resistivity and optical bandgap of the films from 3×1010to 5×106 Ω cm and from 1.3 to 0.6 eV, respectively. Simultaneously, the concentration of electrically active point defects increased significantly and the charge transfer at the a-C:N:H film/redox electrolyte interface was facilitated

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 439
Copyright
Copyright © Materials Research Society 2000

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References

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