Hostname: page-component-6bf8c574d5-8gtf8 Total loading time: 0 Render date: 2025-02-18T05:59:23.403Z Has data issue: false hasContentIssue false
  • English
  • Français

The Electrical Activity at Twin Boundaries in Silicon

Published online by Cambridge University Press:  15 February 2011

B. Cunningham ,
H.P. Strunk  and
D.G. Ast
B. Cunningham
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
H.P. Strunk
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
D.G. Ast
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
Get access

Abstract

Although coherent twin boundaries in silicon are electrically inactive, dislocations in the boundaries can act as efficient recombination centers for minority carriers. Different twin boundary dislocation arrangements have been studied by EBIC and TEM. It is found that the observed EBIC contrast is dependent not only on the arrangement of the dislocations in the boundaries but also on the inclination of the boundaries to the surface. It is shown that different defect configurations can produce similar EBIC contrast.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 51
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strunk, H. and Ast, D.G. Proc. 38th EMSA, 38 323 (1980)Google Scholar
2. Hanoka, J.I. Solar Cells, 1 123 (1980)Google Scholar
3. Yang, K., Schwuttke, G.H. and Ciszek, T.F. J.Cryst Growth, 50 301 (1980)Google Scholar
4. Kalejs, J.P., Mackintosh, B.H. and Surek, T. J.Cryst Growth, 175 Google Scholar
5. Zook, J.D., Koepke, B.G. and Grung, B.L. J.Cryst Growth, 260 Google Scholar
6. Seidensticker, R.G. and Hopkins, R.H. J.Cryst Growth, 221 Google Scholar
7. Baghdadi, A. and Gurtler, R.W. J.Cryst Growth, 236 Google Scholar
8. Khattak, C.P. and Schmid, F. Proc. 13th IEEE Photovoltaic Specialists Conf. Washington D.C., 137 (1978)Google Scholar
9. Leamy, H.J., Kimerling, L.C. and Ferris, S.D. Scanning Electron Microscopy, 1 717 (1978)Google Scholar
10 Cunningham, B., Strunk, H.P. and Ast, D.G., J. Electrochem. Soc., in pressGoogle Scholar
11.Strunk, H.P., Cunningham, B and Ast, D.G. in Defects in Semiconductors, ed. Narayan, J. and Tan, T.Y. 297 (1981).Google Scholar