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The Electrical Activity at Twin Boundaries in Silicon

Published online by Cambridge University Press:  15 February 2011

B. Cunningham ,
H.P. Strunk  and
D.G. Ast
B. Cunningham
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
H.P. Strunk
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
D.G. Ast
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
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Abstract

Although coherent twin boundaries in silicon are electrically inactive, dislocations in the boundaries can act as efficient recombination centers for minority carriers. Different twin boundary dislocation arrangements have been studied by EBIC and TEM. It is found that the observed EBIC contrast is dependent not only on the arrangement of the dislocations in the boundaries but also on the inclination of the boundaries to the surface. It is shown that different defect configurations can produce similar EBIC contrast.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 51
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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