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Electric fields at the SiC/AlN and SiC/GaN polar interfaces

Published online by Cambridge University Press:  17 March 2011

Morad Rouhani Laridjani ,
Pierre Masri  and
Jacek A. Majewski
Morad Rouhani Laridjani
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS-UMR 5650, Université Montpellier 2, cc 074, 12 Place E. Bataillon, 34095 Montpellier CEDEX 5, France
Pierre Masri
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS-UMR 5650, Université Montpellier 2, cc 074, 12 Place E. Bataillon, 34095 Montpellier CEDEX 5, France
Jacek A. Majewski
Affiliation:
Walter Schottky Institute and Physics Department, TU München, Germany
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Abstract

We present first-principles calculations of structural and electronic properties of heterovalent SiC/AlN and SiC/GaN heterostructures with wurtzite AlN and GaN films pseudomorphically grown on the 6H-SiC and 3C-SiC substrates along the c-axis. We have investigated reconstructed stoichiometric interfaces consisting of one mixed layer with various lateral arrangements. The preferred bonding configurations of the reconstructed interfaces are found to be Si-N and Ga-C. The calculated valence band discontinuities for SiC/AlN and SiC/GaN heterostructures lie in the range of 1.5 - 2.3 eV and 0.4 - 1.4 eV, respectively. The SiC/AlN heterostructures are predicted to be of type I, whereas SiC/GaN heterostructures can be of type I or II. The polarization induced interface charges are of the order of 4.8 × 1012cm−2 and 0.7 × 1012 cm−2 in SiC/AlN and SiC/GaN junctions, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.34
Copyright
Copyright © Materials Research Society 2001

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References

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