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Electric Field Induced Heating and Energy Relaxation in GaN

Published online by Cambridge University Press:  21 March 2011

T. A. Eckhause ,
Ö. Süzer ,
Ç. Kurdak ,
F. Yun  and
H. Morkoç
T. A. Eckhause
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Ö. Süzer
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Ç. Kurdak
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
F. Yun
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284
H. Morkoç
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284
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Abstract

We report results of an investigation of electric field induced heating at low temperature in GaN 3-dimensional electron gas films grown on sapphire substrates. The excess noise of the electron gas in a patterned GaN film, while the substrate is held at low temperature, is used to determine the electron temperature. We calculate the rate of power dissipation and compare our results with a calculation of acoustic deformation potential scattering processes in GaN. We discuss the existence of a thermal boundary resistance between the GaN film and the sapphire substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.25.1
Copyright
Copyright © Materials Research Society 2002

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