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Electric Field Dependence of the Electron Drift Velocity in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

R. I. Devlen ,
E. A. Schiff ,
J. Tauc  and
S. Guha
R. I. Devlen
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244
J. Tauc
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
S. Guha
Affiliation:
Energy Conversion Devices Inc., 1675 W. Maple Road, Troy, MI 48084
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Abstract

We present room temperature measurements on the electron drift velocity in hydrogenated amorphous silicon (a-Si:H) for large electric fields (1.3 × 105 to 3 × 105 cm/s). The experimental time resolution was ˜ 1ps and velocities as high as 8 × 105 cm/s were observed. The electron transport was non-dispersive, and the velocity was found to be a superlinear function of the applied field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 107
Copyright
Copyright © Materials Research Society 1989

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References

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