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Electric Field Dependence of the Electron Drift Velocity in Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
We present room temperature measurements on the electron drift velocity in hydrogenated amorphous silicon (a-Si:H) for large electric fields (1.3 × 105 to 3 × 105 cm/s). The experimental time resolution was ˜ 1ps and velocities as high as 8 × 105 cm/s were observed. The electron transport was non-dispersive, and the velocity was found to be a superlinear function of the applied field.
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- Copyright © Materials Research Society 1989
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