Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T11:09:49.015Z Has data issue: false hasContentIssue false
  • English
  • Français

Electric Degradation and Defect Formation of Silicon Due to Cu, Fe, and Ni Contamination

Published online by Cambridge University Press:  03 September 2012

Shunta Naito  and
Tsuneo Nakashizu
Shunta Naito
Affiliation:
NSC Electron Corporation, Hikari, Yamaguchi, Japan
Tsuneo Nakashizu
Affiliation:
Nippon Steel Corporation, Hikari, Yamaguchi, Japan
Get access

Abstract

Electric degradation of silicon wafer due to Cu, Fe, and Ni contamination has been studied using MCZ with low oxygen and CZ wafers. In the cases of Cu and Ni contamination, the electric properties depended on the characteristics of the starting wafers,. especially the type of conductance. The behavior of these metals in the low temperature region played an important role to understand the electric properties. On the contrary, no difference between p- and n-type wafers was observed in Fe contamination in our experiment.

The surface defects were observed with high density in the MCZ wafers in Cu contamination. These defects were sensitive to the degradation of the MOS C-t generation lifetime. Making use of this relation, the efficiency of the extrinsic gettering was evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 641
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Weber, E. R., Appl. Phys. A30, 1 (1983).Google Scholar
2. Partanen, J., Tuomi, T., Tilli, M., Hahn, S., Wong, C-C. D. and Ponce, F. A., J. Mater. Res. 4 623 (1989).Google Scholar
3. Wong, H. and Cheung, N. W.:, Appl. Phys. Lett. 52. 889 (1988).CrossRefGoogle Scholar
4. Hayafuji, Y., Yanada, T. and Aoki, Y., J. Electrochem. Soc. 128 1975 (1981).Google Scholar
5. Tanno, K., Shimura, F. and Kawamura, T., J. Electrochem. Soc. 128, 395 (1981).Google Scholar
6. Tan, T. Y., Gardner, E. E. and Tice, W. K., Appl. Phys. Lett. 30 175 (1977).Google Scholar
7. Hourai, M., Murakami, K., Shigematsu, T., Fujino, N. and Shiraiwa, T., Jpn. J. Appl. Phys. 28 2413 (1989).Google Scholar
8. Sadamitsu, S., Sumita, S., Fujino, N. and Shiraiwa, T., Jpn. J. Appl. Phys. 27 L1819 (1988).Google Scholar
9. Miyazaki, M., Sano, M., Sadamitsu, S., Sumita, S., Fujino, N. and Shiraiwa, T., Jpn. J. Appl. Phys. 28 L519 (1989).Google Scholar
10. Sadamitsu, S., Sano, M., Hourai, M., Sumita, S., Fujino, N. and Shiraiwa, T., Jpn. J. Appl. Phys. 28 L333 (1989).CrossRefGoogle Scholar
11. Seibt, M. and Graff, K., J. Appl. Phys. 63 4444 (1988).Google Scholar
12. Jastrzebski, L., Soydan, R., Elabd, H., Henry, W. and Savoye, E., J. Electrochem. Soc. 137 242 (1990).Google Scholar
13. Nadahara, S., Watanabe, M., and Yamabe, K., Extended Abstracts of the 22nd (1990) International Conference on Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, Japan, 1990), p 409.Google Scholar
14. Graff, K., in Aggregation Phenomena of Point Defects in Silicon, edited by Sirtl, E. and Goorissen, J. (The Electrochemical Society, Pennington, NJ, 1983), p. 121.Google Scholar
15. Ishizaka, K. and Tanaka, H. (private communication).Google Scholar
16. Grove, A. S., in Physics and Technology of Semiconductor Devices (lohn Wiley & Sons, Inc. 1967), p. 105.Google Scholar
17. Hall, R. N. and Racette, J. H., J. Appl. Phys. 35 379 (1964).CrossRefGoogle Scholar
18. Gilles, D., Schroter, W. and Bergholz, W., Phys. Rev. B41 5770 (1980).Google Scholar