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Electrcn Trapping/Detrapping in Thin SiO2 Under High Fields

Published online by Cambridge University Press:  22 February 2011

N. R. Wu ,
S. Chiao ,
C. Wang ,
B. Bhushan  and
C. Y. Yang
N. R. Wu
Affiliation:
Could AMI Semiconductors, 7800 Homestead Road, Santa Clara, CA 95051
S. Chiao
Affiliation:
Could AMI Semiconductors, 7800 Homestead Road, Santa Clara, CA 95051
C. Wang
Affiliation:
Could AMI Semiconductors, 7800 Homestead Road, Santa Clara, CA 95051
B. Bhushan
Affiliation:
Could AMI Semiconductors, 7800 Homestead Road, Santa Clara, CA 95051
C. Y. Yang
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of Santa Clara, Santa Clara, CA 9503
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Abstract

A constant alternating current stressing technique is employed to study the electron trapping and detrapping cha~acteristics within a layer of thin silicon dioxide (˜.100 Å). A two-charge centroid model is proposed to explain the trapping/detrapping phenomena under high electric fields. The oxide breakdown mechanism induced by the local field of trapped electrons is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 99
Copyright
Copyright © Materials Research Society 1985

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