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Elaboration of h-Bn Sheathed β-Sic Nanocables

Published online by Cambridge University Press:  15 February 2011

K. Saulig-Wenger ,
D. Cornu ,
F. Chassagneux ,
P. Miele  and
T. Epicier
K. Saulig-Wenger
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
D. Cornu
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
F. Chassagneux
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
P. Miele
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
T. Epicier
Affiliation:
GEMPPM UMR CNRS 5510 INSA Lyon 20, Avenue Albert Einstein F-69621 Villeurbanne Cedex, France
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Abstract

h-BN sheathed β-SiC nanocables were synthesized under argon at 1200°C by the direct thermal treatment of a silicon powder mixed with turbostratic boron nitride. The structure and the chemical composition of these nanocables have been investigated by HRTEM, EDX and EELS. They have a diameter ranging from 10 to 80 nm. The core of these nanocomposites is composed of pure cubic silicon carbide and the outer layers have been shown to be hexagonal boron nitride planes, set in a parallel direction to the nanocables axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 772: Symposium M – Nanotube-Based Devices , 2003 , M3.3
Copyright
Copyright © Materials Research Society 2003

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