Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T06:17:45.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates

Published online by Cambridge University Press:  01 February 2011

Jun Suda ,
Norio Onojima ,
Tsunenobu Kimoto  and
Hiroyuki Matsunami
Jun Suda
Affiliation:
PRESTO “Nanostructure and Material Property”, Japan Science and Technology Agency, 4–1–8 Honcho Kawaguchi, Saitama 332–0012, Japan Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 616–8510, Japan
Norio Onojima
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 616–8510, Japan
Tsunenobu Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 616–8510, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto 616–8510, Japan
Get access

Abstract

AlN was grown on 4H- or 6H-SiC (0001) on-axis substrates by plasma-assisted molecular beam epitaxy. By utilizing optimized SiC surface pretreatment, RHEED oscillations just after the growth of AlN were obtained with high reproducibility. This study focused on the growth kinetics of AlN and the correlation between kinetics and the crystalline quality of the grown layers. It was found that the growth mode changed from layer-by-layer to step-flow for high growth temperatures, while for lower temperatures the layer-by-layer growth mode persisted. The mechanism responsible for the change in growth mode is discussed. Symmetrical (0002) and asymmetrical (01–14) x-ray rocking curve measurements were carried out to evaluate the crystalline quality. For the (0002) peak, both high-temperature and low-temperature grown layers showed almost the same FWHM values. On the other hand, for the (01–14) peak, the FWHM of low-temperature grown AlN was much smaller (180 arcsec) than that of the high-temperature grown AlN (450 arcsec).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y3.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Onojima, N., Suda, J. and Matsunami, H.: Appl. Phys. Lett. 80, 76 (2002).Google Scholar
[2] Onojima, N., Suda, J. and Matsunami, H., Jpn. J. Appl. Phys. 42, L445 (2003).Google Scholar
[3] Nakamura, S., Kimoto, T., Matsunami, H., Teraguchi, N. and Suzuki, A.: Appl. Phys. Lett. 76, 3412 (2000).Google Scholar
[4] Kaplan, R.: Surf. Sci. 215, 111 (1989).Google Scholar
[5] Owman, F. and Martensson, P.: Surf. Sci. 330, L639 (1995).Google Scholar