Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-20T02:48:27.600Z Has data issue: false hasContentIssue false
  • English
  • Français

Eiectromigration in Cu/W Structure

Published online by Cambridge University Press:  25 February 2011

C. -K. Hu ,
M. B. Small  and
P. S. Ho
C. -K. Hu
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
M. B. Small
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
P. S. Ho
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

Mass transport by electromigration in sputtered Cu line segments on a continuous W line has been measured using the drift velocity technique at temperatures from 166 to 396 °C. The Ta/Cu/Ta line segments are patterned by dry etching techniques. Cu mass depletion (voids) at the cathode end and accumulation (hillocks) at the anode were measured as a function of time from scanning electron microscope micrographs. The edge displacement of Cu was found to increase linearly with time. The activation energy for Cu electromigration drift velocity, which relates to the product of effective charge number and diffusivity, Z*D, is found to be 0.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 729
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hu, C. -K., Small, M. B., Kaufman, F. and Pearson, D. J., Mat. Res. Soc. Symp. Proc. VLSI V, 369 (1990).Google Scholar
2. Pai, P. L. and Ting, C. H., IEEE Electron Device Lett. 10, 423 (1989).CrossRefGoogle Scholar
3. Huntington, H. B., in “Diffusion in Solids: Recent Development”, edited by Nowick, A. S. and Burton, J. J. (Academic, New York, 1974)Chap. 6.Google Scholar
4. Park, C. W. and Vock, R. W., Appl Phys. Lett. 59, 175 (1991).CrossRefGoogle Scholar
5. Nitta, T., Ohmi, T., Otsuki, M., Tokewaki, T. and Shibata, T., J. Electrochem. Soc. 139, 922 (1992).CrossRefGoogle Scholar
6. Ho, P. S. and Kwok, T., Rep. Progr. Phys. 52, 301 (1989).CrossRefGoogle Scholar
7. Hummel, R. E., in “Electro- and Thermo-transport in Metals and Alloys”, edited by Hummel, R. E. and Huntington, H.B., AIME, NY (1977), Chap. VI.Google Scholar
8. d'Heurle, F. and Rosenberg, R., Phys. Thin Film, 7, 257 (1973).CrossRefGoogle Scholar
9. Hu, C. -K., Ho, P. S. and Small, M., Mat. Res. Soc. Symp. Proc. 225, 99 (1991).CrossRefGoogle Scholar
10. Blech, I. A. and Kinsborn, E., Thin Solid Film, 25, 327 (1975).CrossRefGoogle Scholar
11. Moy, D., Schadt, M., Hu, C. -K., Kauman, F., Ray, A., Mazzeo, N., Baran, E., and Pearson, D.J., Proc. of the 6th International VLSI Mutilevel Interconnection Conf., (IEEE, NY, 1989) p. 26 Google Scholar
12. Geffken, R. Proc. of the 8th International VLSI Mutilevel Interconnection Conf., (IEEE, NY, 1990) p. 20 Google Scholar
13. Vieregge, K., and Gupta, D., in “Tungsten and Tungsten Alloys-Recent Advances”, edited by Crowson, A. and Chen, E. S. (The Minerals, Metal & Materials Soc, 1991) pp. 231–243 Google Scholar
14. Blech, I. A., J. Appl. Phys. 47, 1203 (1976).CrossRefGoogle Scholar
15. Huntington, H. B. and Gone, A. R., J. Phy. Chem. Solids, 20, 76 (1961).CrossRefGoogle Scholar
16. Hu, C. -K. and Huntington, H. B., in “Diffusion Phenomena in Thin Films and Microelectronic Materials”, edited by Gupta, D. and Ho, P. S. (Noyes Publications, Park Ridge, N.J. 1988) Chap. 10.Google Scholar
17. Schoen, J. M., Poate, J. M., Doherty, C. J. and Melliar-Smith, C. M., J. Appl. Phys. 50, 6910 (1979).CrossRefGoogle Scholar
18. Burton, B. and Greenwood, G. W., Met, J.. Sci., 4, 215 (1970).Google Scholar
19. Kirchheim, R., Acta metali. Matter., 40, 309 (1992).CrossRefGoogle Scholar
20. Gupta, D., J. Appl. Phys., 44, 4455 (1973).CrossRefGoogle Scholar
21. Gupta, D., in “Diffusion Phenomena in Thin Films and Microelectronic Materials”, edited by Gupta, D. and Ho, P.S. (Noyes Publications, Park Ridge, N. J. 1988) Chap. 1.Google Scholar