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Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

Published online by Cambridge University Press:  01 February 2011

D. Guimard ,
N. Bodereau ,
J. Kurdi ,
J.F. Guillemoles ,
D. Lincot ,
Pierre-Philippe Grand ,
Moez Ben Farrah ,
Stéphane Taunier ,
Olivier Kerrec  and
P. Mogensen
D. Guimard
Affiliation:
Laboratoire d'Électrochimie et de Chimie Analytique (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
N. Bodereau
Affiliation:
Laboratoire d'Électrochimie et de Chimie Analytique (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
J. Kurdi
Affiliation:
Laboratoire d'Électrochimie et de Chimie Analytique (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
J.F. Guillemoles
Affiliation:
Laboratoire d'Électrochimie et de Chimie Analytique (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
D. Lincot
Affiliation:
Laboratoire d'Électrochimie et de Chimie Analytique (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
Pierre-Philippe Grand
Affiliation:
EDF-R&D, CISEL, 6 Quai Watier-BP 49, 78401 Chatou cedex, France
Moez Ben Farrah
Affiliation:
EDF-R&D, CISEL, 6 Quai Watier-BP 49, 78401 Chatou cedex, France
Stéphane Taunier
Affiliation:
EDF-R&D, CISEL, 6 Quai Watier-BP 49, 78401 Chatou cedex, France
Olivier Kerrec
Affiliation:
EDF-R&D, CISEL, 6 Quai Watier-BP 49, 78401 Chatou cedex, France
P. Mogensen
Affiliation:
Saint-Gobain Recherche, Aubervilliers, France
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Abstract

CuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B6.9
Copyright
Copyright © Materials Research Society 2003

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References

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