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Efficiency Improvement of a-Si Solar Cells Deposited in a Single Chamber, Large Area, Pecvd Reactor

Published online by Cambridge University Press:  10 February 2011

E. Terzini ,
C. Privato ,
S. Avagliano ,
P. Mangiapane  and
T. Fasolino
E. Terzini
Affiliation:
ENEA Centro Ricerche, I-80055 Portici (Italy), [email protected]
C. Privato
Affiliation:
ENEA Centro Ricerche, I-80055 Portici (Italy), [email protected]
S. Avagliano
Affiliation:
ENEA Centro Ricerche, I-80055 Portici (Italy), [email protected]
P. Mangiapane
Affiliation:
ENEA Centro Ricerche, I-80055 Portici (Italy), [email protected]
T. Fasolino
Affiliation:
ENEA Centro Ricerche, I-80055 Portici (Italy), [email protected]
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Abstract

In order to realize large area integrated a-Si modules using a commercial, single chamber, PECVD reactor, an accurate optimization of deposition process for p-i-n solar cell has been performed leading to a 1 cm2 device efficiency value of 10.3 %.

Besides the efficiency improvements achieved by the insertion of a graded layer at p/i interface and by the introduction of SnO2 Asahi type U substrate, an “interface cleaning procedure”, based on NF3 flushing step, was the key for the cells Voc and fill factor increase.

Microcrystalline n+ layer, ZnO/Ag back contact and device thermal annealing gave further contributions to the cell efficiency.

Utilizing this technology, a large area p-i-n modules (900 cm2) with an initial efficiency of 8.5% has been manufactured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 15
Copyright
Copyright © Materials Research Society 1996

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