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Effects of X-ray Irradiation on MOSFET Characteristics and DRAM Leakage Phenomena

Published online by Cambridge University Press:  15 February 2011

Srinandan R. Kasi  and
Steven H. Voldman
Srinandan R. Kasi
Affiliation:
IBM Corporation 1000 River Road, Essex Junction, Vermont 05452
Steven H. Voldman
Affiliation:
IBM Corporation 1000 River Road, Essex Junction, Vermont 05452
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Abstract

The influence of 0–1000 mJ/cm2 1–2 keV x-ray radiation on the MOSFET characteristics of submicron CMOS devices is investigated. Fully-integrated LOCOS- and STI-defined MOSFET structures, with abrupt- and LDD-junction geometries, are used to evaluate irradiation effects on different device design features for future (post-256 Mb DRAM) logic and DRAM technology considerations. The effects of x-ray irradiation on DRAM trench storage-node leakage are also investigated and compared to high energy ion implant-related leakage behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 243
Copyright
Copyright © Materials Research Society 1992

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References

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