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Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Daisuke Muto ,
Ryotaro Yoneda ,
Hiroyuki Naoi ,
Masahito Kurouchi ,
Tsutomu Araki  and
Yasushi Nanishi
Daisuke Muto
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Ryotaro Yoneda
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Hiroyuki Naoi
Affiliation:
Center for Promotion of the COE Program, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Masahito Kurouchi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Tsutomu Araki
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Yasushi Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
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Abstract

The effects of the nitridation process of (0001) sapphire on crystalline quality of InN were clearly demonstrated. The InN films were grown on NFM (nitrogen flux modulation) HT-InN or LT-InN buffer layers, which had been deposited on nitridated sapphire substrates. We found that low-temperature nitridation of sapphire is effective in improving the tilt distribution of InN films. Whereas the twist distribution remained narrow and almost constant, independent of nitridation conditions, when LT-InN buffer layers were used. The XRC-FWHM value of 54 arcsec for (0002) InN, the lowest reported to date, was achieved by using the LT-InN buffer layer and sapphire nitridation at 300°C for 3 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E4.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Davydov, V. Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A. V., Aderhold, J., Semchinova, O., and Graul, J., phys. stat. sol. (b) 229, R1 (2002).Google Scholar
2. Wu, J., Walukiewicz, W., Yu, K. M., Arger, J. W. III, Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., and Nanishi, Y., Appl. Phys. Lett. 80, 3967 (2002).Google Scholar
3. Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., and Kurimoto, E., Appl. Phys. Lett. 81, 1246 (2002).Google Scholar
4. Osamura, K., Nakajima, K. and Murakami, Y., Solid State Commun. 11, 617 (1972).Google Scholar
5. Tansley, T. L. and Foley, C. P., J. Appl. Phys. 59, 3241 (1986).Google Scholar
6. Bhuiyan, A. G., Hashimoto, A., and Yamamoto, A., J. Appl. Phys. 94, 2779 (2003).Google Scholar
7. Yamamoto, A., Tsujino, M., Ohkubo, M., and Hashimoto, A., J. Cryst. Growth 137, 415 (1994).Google Scholar
8. Pan, Y. C., Lee, W. H., Shu, C. K., Lin, H. C., Chiang, C. I., Chang, H., Lin, D. S., Lee, M. C., and Chen, W. K., Jpn. J. Appl. Phys. 38, 645 (1999).Google Scholar
9. Tsuchiya, T., Yamano, H., Miki, O., Wakahara, A., and Yoshida, A., Jpn. J. Appl. Phys. 38, 1884 (1999).Google Scholar
10. Yamaguchi, T., Saito, Y., Kano, K., Muramatsu, T., Araki, T., and Nanishi, Y., Mat. Res. Soc. Symp. Proc. 693, I3.41 (2002).Google Scholar
11. Romano, L. T., Myers, T. H., Appl. Phys. Lett. 71 3486 (1997).Google Scholar
12. Balakrishnan, K., Okumura, H., Yoshida, S., J. Cryst. Growth 189/190, 244 (1998).Google Scholar
13. Muto, D., Araki, T., Naoi, H., Matsuda, F. and Nanishi, Y., submitted to phys. stat. sol. Google Scholar
14. Muto, D., Araki, T., Naoi, H., Matsuda, F. and Nanishi, Y., Abstract of 2004 International Workshop on Nitride Semiconductors, Pittsburgh, Pennsylvania, USA, 19–23 Jul., P15.9 (2004).Google Scholar
15. Heinlein, C., Grepstad, J., Berge, T., and Riechert, H., Appl. Phys. Lett. 71 341 (1997).Google Scholar
16. Srikant, V., Speck, J. S., and Clarke, D. R., J. Appl. Phys. 82 4286 (1997).Google Scholar