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Effects of Surface Termination on CuIn1−XGaXSe2 Prepared from Mixed Cu-In-Ga-Se Precursors

Published online by Cambridge University Press:  21 March 2011

Markus E. Beck ,
Jeff Alleman ,
Amy Swartzlander-Guest ,
Rick Matson  and
Rommel Noufi
Markus E. Beck
Affiliation:
Global Solar Energy, 5575 South Houghton Road, Tucson, AZ 85747, U.S.A
Jeff Alleman
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
Amy Swartzlander-Guest
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
Rick Matson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
Rommel Noufi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
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Abstract

Thin film CuIn(Ga)Se2 samples were prepared by a two-stage method starting from amorphous or nano-crystalline precursor structures. Deposition of individual Cu+Se and In+Se layers as a function of substrate temperature revealed the onset of detectable crystal structures at Tsub = 100°C and Tsub. ≥200°C, respectively. For the quaternary system the formation of CuInSe2 was observed at 400°C and evidence was found for liquid CuxSe assisted growth.

Further focus was on surface termination schemes with the objective to enhance the opencircuit voltage. Ga+Se, In+Se, Ga+Se/In+Se, and In+Se/Ga+Se terminating layers with varying amounts of Ga and In are addressed. Schemes studied to date have resulted in an increase in Voc at the expense of short-circuit current. The use of Ga containing termination layers resulted in the formation of large voids in the CIGS which could be explained by the volume changes during formation of the quaternary material and a Cu2Se free surface in these instances.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.9
Copyright
Copyright © Materials Research Society 2001

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References

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