Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-07-07T22:50:40.027Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Surface and Bulk Defects in InP

Published online by Cambridge University Press:  26 February 2011

C. Warren ,
K. Reinhardt ,
A. Singh ,
Y. S. Lee  and
W. A. Anderson
C. Warren
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
K. Reinhardt
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
A. Singh
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
Y. S. Lee
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
Get access

Abstract

Undoped, n-type InP has been studied utilizing Au-oxide- InP metal-insulator-semiconductor (MIS) structures. Processing variations have included oxide growth techniques, and annealing of grown oxides. Annealing of the devices in N2 or N2 :H2 after oxide formation has reduced reverse saturation current density by up to a factor of 10 and increased barrier height from 0.45 to 0.65 eV. Annealing of the oxide increases refractive index due possibly to a densification or changed chemical structure. ESCA data reveals thin native oxides to be InP04 whereas thermally grown ones also contain P2 05 and In2 03. DLTS data reveals a dominant defect 597 meV below the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 491
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Pearsall, T.P. and Digiuseppe, M.A., IEEE Elec. Dev. Lett., EDL-7, 317 (1986).Google Scholar
2.Newman, N., Kendelewicz, T., Bowman, L. and Spicer, W.E., Appl. Phys. Lett., 46, 1176 (1985),Google Scholar
3.Wilmsen, C.W., J. Vac. Sci. Technol., 19, 279, Sept./Oct. (1981).Google Scholar
4.Dunn, J. and Stringfellow, G.B., J. Elec. Mtls., in press.Google Scholar
5.Ogara, M., Mizuta, M., Hase, N. and Kukimoto, H., Jap. J. Appl. Phys., 22, 658 (1983).Google Scholar
6.Nicholas, D.J., Allsopp, D., Hamilton, D. and Peaker, A.R., J. Crystal Growth, 68, 326 (1984).Google Scholar