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The Effects of Substrate Preheating and Post-Deposition Annealing on CrMn/CoCrPt/CrMn/NiAI Films

Published online by Cambridge University Press:  10 February 2011

Jie Zou ,
David E. Laughlin  and
David N. Lambeth
Jie Zou
Affiliation:
Department of Electrical and Computer Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, [email protected]
David E. Laughlin
Affiliation:
Department of Materials Science and Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213
David N. Lambeth
Affiliation:
Department of Electrical and Computer Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, [email protected]
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Abstract

In this study, we examine the effects of introducing CrMn as an intermediate layer between the NiAI underlayer and the CoCrPt magnetic layer, and as an overlayer on top of the Co-alloy film. The effects of deposition temperature and post-deposition annealing on the texture and magnetic properties were studied. Post-deposition annealing effectively lowered the exchange coupling between grains, increased the coercivity by 38%, up to 4600 Oe, and moderately decreased the Ms by 15%. Interlayer diffusion of CrMn into the CoCrPt grain boundaries is believed to cause the change in magnetic properties. It was also found that granular exchange coupling seems to be correlated to the Co-alloy in-plane texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 217
Copyright
Copyright © Materials Research Society 1998

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References

1. Futamoto, M., Inaba, N., and Nakamura, A., Inst. Elect. Infor. Comm. Eng. (Japan) MR96–43, pp 47 (1996).Google Scholar
2. Nakai, J., Kusumoto, E., Kuwabara, M., Miyamoto, T., Visokay, M. R., Yoshikawa, K., and Itayama, K., IEEE Trans. Magn. 30, pp 3969 (1994).Google Scholar
3. Doerner, M. F., Yogi, T., Parker, D. S., Lambert, S., Hermsmeier, B., Allegranza, O. C., Nguyen, T., IEEE Trans. Magn. 29, pp 3667 (1993).Google Scholar
4. Murayama, A., Kondoh, S., and Miyamura, M., J. Appl. Phys. 75, pp 6147 (1994).Google Scholar
5. Kawanabe, T., et al. , IEEE Trans. Magn. 26, pp 42 (1990).Google Scholar
6. Feng, Y. C., Laughlin, D. E., and Lambeth, D. N., IEEE Trans. Magn. 30, pp 3948 (1994).Google Scholar
7. Lee, L.-L., Laughlin, D. E., and Lambeth, D. N., to be published by IEEE Trans. Magn.Google Scholar
8. Lee, L.-L., Laughlin, D. E., Fang, L., and Lambeth, D. N., IEEE Trans. Magn. 31, pp 2728 (1995).Google Scholar
9. Zou, J., Laughlin, D. E., and Lambeth, D. N., to be published by IEEE Trans. Magn.Google Scholar
10. Gupta, D. in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P. S., Noyes Publications, Park Ridge, New Jersey, 1988, pp 33–51.Google Scholar
11. Zhu, J.-G. and Bertram, H. N., J. Appl. Phys. 69, pp 6084 (1991).Google Scholar