Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:52:31.699Z Has data issue: false hasContentIssue false

Effects of Structural Properties of νc-Si:H Absorber Layers on Solar Cell Performance

Published online by Cambridge University Press:  17 March 2011

O. Vetterl
Affiliation:
Institut für Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
R. Carius
Affiliation:
Institut für Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
L. Houben
Affiliation:
Institut für Festkörperphysik, Forschungszentrum Juelich GmbH, 52425 Juelich, GermanyElectronic mail:[email protected]
C. Scholten
Affiliation:
Institut für Festkörperphysik, Forschungszentrum Juelich GmbH, 52425 Juelich, GermanyElectronic mail:[email protected]
M. Luysberg
Affiliation:
Institut für Festkörperphysik, Forschungszentrum Juelich GmbH, 52425 Juelich, GermanyElectronic mail:[email protected]
A. Lambertz
Affiliation:
Institut für Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
F. Finger
Affiliation:
Institut für Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
H. Wagner
Affiliation:
Institut für Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
Get access

Abstract

Thin film microcrystalline silicon solar cells with absorber layers of various structural composition have been prepared. The highest conversion efficiency is observed at preparation conditions close to the transition to the amorphous growth regime, i.e. crystalline volume fraction is high but not at its maximum. The optimized material consists of crystalline “fibers” with small diameter which extend through the whole absorber layer. On further approach to the transition regime a set in of amorphous growth can be observed, resulting in decreasing solar cell performance. Surprisingly, material prepared under conditions favoring highly crystalline growth exhibits a less efficient carrier extraction if applied to the solar cell. We discuss increasing bulk recombination as possible cause for this observation. The maximum conversion efficiency obtained was 8.7 % for a 1 νm single junction solar cell. Using our optimized deposition conditions with simultaneously higher discharge powers the deposition rate can be increased up to 4.6 Å/s at the high efficiency of 8.3 %.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamamoto, K., Yoshimi, M., Tawada, Y., Okamoto, Y., and Nakajima, A., Technical Digest of the 11th Intern. Photovoltaic Science and Eng. Conf., Sapporo, Japan (1999).Google Scholar
2. Saito, K., Sano, M., Matuda, K., Kondo, T., Nishimoto, T., Ogawa, K., and Kajita, I.: In Proc. 2nd World Conf. Photovolt. Solar Energy Conv., ed. by Schmid, J., Ossenbrink, H.A., Helm, P., Ehmann, H., Dunlop, E.D. (European Comission, Ispra, Italy 1998) p. 351.Google Scholar
3. Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Selvan, J.A. Anna, Vaucher, N. Pellaton, Hof, Ch., Fischer, D., Keppner, H., Shah, A., Ufert, K.-D., Giannouläs, P., and Koehler, J., Mat. Res. Soc. Symp. Proc. 420, 3 (1996).Google Scholar
4. Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lambertz, A., Mück, A., Rech, B., and Wagner, H., Solar Energy Materials & Solar Cells 62, 97 (2000).Google Scholar
5. Vetterl, O., Lambertz, A., Dasgupta, A., Finger, F., Rech, B., Kluth, O., and Wagner, H., Technical Digest of the 11th Intern. Photovoltaic Science and Eng. Conf., Sapporo, Japan (1999), also to be published in Solar Energy Materials & Solar Cells.Google Scholar
6. Houben, L., Luysberg, M., Hapke, P., Carius, R., Finger, F., and Wagner, H., Phil. Mag. A 77, 1447 (1998).Google Scholar
7. Kluth, O., Vetterl, O., Carius, R., Finger, F., Wieder, S., Rech, B., Wagner, H., Mater. Res. Soc. Symp. Proc. 557 (1999), in press.Google Scholar