Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:16:27.423Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Stress on the Interdiffusion in Si1-xGex/Si Superlattices

Published online by Cambridge University Press:  26 February 2011

S.M. Prokes
S.M. Prokes*
Affiliation:
Naval Research Laboratory, Washngton D.C. 20375
Get access

Abstract

The effects of grown-in stress and applied external stress on the interdiffusion behavior in long-period Si0.7Ge0.3/Si is examined using x-ray diffraction and Raman Spectroscopy. Both symmetrically and asymmetrically–strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 eV and 4.6eV have been obtained, respectively. In addition, an enhanced interdiffusion has also been measured when the asymmetrically–strained superlattice was subjected to an external tensile stress during annealing. In both cases, enhanced interdiffusion has been measured whenever the Si barrier layers experience tensile stress during annealing. The Raman results indicate that enhanced Ge diffusion into the Si barriers occur when these barriers are put under tensile stress. This result will be discussed in terms of the kinetics of defect formation and motion in the strained Si barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 129
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Higashi, G.S., Bean, J.C., Buescher, C., Yadvish, R., and Temkin, H., Appl. Phys. Lett. 56, (1990) 2560.Google Scholar
2 Patton, G.L., Iyer, S.S., Delaage, S.L., Tiwari, S., and Stork, J.M., IEEE Elec. Dev. Lett. 9, (1988) 165.Google Scholar
3 Kasper, E., Surface Science 174 (1986) 630.Google Scholar
4 Kash, K., Worlock, J.M., Mahoney, D.D., Gozdz, A.S., Gaag, B.P. Van der, Harbison, J.P., Lin, P.S.D., and Florez, L.T., Surface Science 228 (1990) 415.Google Scholar
5 Frank, W., Gosele, U., Mehrer, H., and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G.E. and Nowick, A.S. (Academic Press, New York, 1984) 63.Google Scholar
6 Bean, J.C., Fiory, A.F., Hull, R., and Lynch, R.T., in Proceedings of the 1st International Symposium on Si MBE, edited by Bean, J.C. (Electrochemical Society, Pennington, NJ, 1985) 385.Google Scholar
7 Chang, S.J., Wang, K.L., Bowman, R.C. Jr, and Adams, P.M., Appl. Phys. Lett. 54, (1989) 1253.Google Scholar
8 Prokes, S.M. and Wang, K.L., Appl. Phys. Lett. 56 (1990) 2528.Google Scholar
9 Baribeau, J.M., Pascual, R., and Saimoto, S., Appl. Phys. Lett. 57 (1990) 1502.Google Scholar
10 People, R. and Bean, J.C, Appl. Phys. Lett. 499 (1986) 229 Google Scholar
11 Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B4 (1986) 720.Google Scholar
12 Prokes, S.M., Fatemi, M., and Wang, K.L., J. Vac. Sci. B8 (1990) 254.Google Scholar
13 Cahn, J.W. and Hilliard, J.E., J. Chem. Phys. 28, (1958) 258.Google Scholar
14 Prokes, S.M., Glembocki, O.J., Twigg, M.E., and Wang, K.L., J Electr. Mat. 20 (1991) 389.Google Scholar