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Effects of Strain-Induced Defects on Excess Carrier Lifetime and Ambipolar Diffusion in nipi-Doped In0.2Ga0.8As/GaAs Mqws

Published online by Cambridge University Press:  15 February 2011

H.T. Lin ,
D.H. Rich  and
A. Larsson
H.T. Lin
Affiliation:
Department of Materials Science & Engineering, University of Southern California, Los Angeles, CA 90089-0241
D.H. Rich
Affiliation:
Department of Materials Science & Engineering, University of Southern California, Los Angeles, CA 90089-0241
A. Larsson
Affiliation:
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S-412 96 Göteborg, Sweden
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Abstract

The effects of strain-induced defects on excess carrier lifetime and transport in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure were examined with a new method called electron beam-induced absorption modulation (EBIA) in which the kinetics of carrier transport and recombination are examined with a high-spatial, -spectral and -temporal resolution. The excess carrier lifetime and ambipolar diffusion were found to be reduced by factors of ∼1013 and ∼103 compared to theoretical values, respectively, and this is attributed to the presence of strain-induced defects. The MQW excitonic absorption coefficient sensitively depends on the carrier density in the QWs, as a result of screening of the electron-hole (e-h) Coulombic interaction. Likewise, ambipolar diffusion is found to depend on the excess carrier density in a nonlinear fashion, as a result of the e-h plasma-induced changes in the local depletion widths in the vicinity of structural defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 275
Copyright
Copyright © Materials Research Society 1995

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References

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