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Effects of Stoichiometry on Pzt Thin Film Capacitor Properties

Published online by Cambridge University Press:  25 February 2011

S.D. Bernstein ,
Yanina Kisler ,
J. M. Wahl ,
S. E. Bernacki  and
S. R. Collins
S.D. Bernstein
Affiliation:
Raytheon Research Division, Lexington, MA 02173
Yanina Kisler
Affiliation:
Raytheon Research Division, Lexington, MA 02173
J. M. Wahl
Affiliation:
Raytheon Research Division, Lexington, MA 02173
S. E. Bernacki
Affiliation:
Raytheon Equipment Division, Sudbury, MA 01776
S. R. Collins
Affiliation:
Raytheon Equipment Division, Sudbury, MA 01776
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Abstract

The effects of excess Pb and Zr/Ti ratio on crystallization behavior and ferroelectric properties of sol-gel derived films were studied. Excess Pb was found to reduce the crystallization temperature. Films with good ferroelectric properties (remanent polarization greater than 8 μC/cm2 ) were achieved after 550 °C, 5 minute crystallization. The difference in the magnitude of the charge in response to switching and non-switching pulses was greater than 1 μC/cm2 after 1011 fatigue cycles for many of the films. The arnount of charge remaining after fatigue was found to be dependent on the initial charge. Reducing the partial pressure of oxygen during crystallization affected both the remanent polarization and fatigue behavior. The fatigue rate was relatively independent of composition and crystallization temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 373
Copyright
Copyright © Materials Research Society 1992

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