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Effects of Sputtering Metal Deposition Parameters in the Photoresist used as a Sacrificial Layer in Micro-electromechanical System Devices

Published online by Cambridge University Press:  01 February 2011

David Molinero
David Molinero*
Affiliation:
[email protected], Universitat Politecnica de Catalunya, electronics department, jordi girona 1-3, campus nord modul c4, barcelona, E-08034, Spain, +34 401 68 40
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Abstract

The present letter describes a reliability study of the micro-electromechanical system fabrication with a photoresist layer used as sacrificial layer with an aluminum beam deposited by means of RF sputtering method. This work reports changes of the roughness and planarity of the sacrificial layer beneath the aluminum film following the sputtering deposition. Such changes may be attributed to the alteration of the photoresist properties due principally to the outgassing of hydrogen by decomposition of C-H bonds under argon plasma. A safe deposition parameters area was identified where the photoresist layer keeps its properties and may be used as sacrificial layer.

Keywords

microelectro-mechanical (MEMS)microstructuredefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1075: Symposium J – Passive and Electromechanical Materials and Integration , 2008 , 1075-J07-01
Copyright
Copyright © Materials Research Society 2008

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References

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