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Effects of Simulated X-Ray Lithography Exposures On Submicron-Channel Mosfets

Published online by Cambridge University Press:  15 February 2011

A. J. Lelis  and
T. R. Oldham
A. J. Lelis
Affiliation:
U.S. Army Research Laboratory, AMSRL-WT-NG 2800 Powder Mill Rd, Adelphi,MD 20783
T. R. Oldham
Affiliation:
U.S. Army Research Laboratory, AMSRL-WT-NG 2800 Powder Mill Rd, Adelphi,MD 20783
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Abstract

Investigations of submicron-channel-length n- and p-channel MOSFETs subjected to channel hot-carrier stressing were performed, comparing the reliability of devices with and without exposure to simulated x-ray lithography processing steps. No significant differences were observed between the sample groups.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 57
Copyright
Copyright © Materials Research Society 1993

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References

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