Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T09:39:27.509Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

Published online by Cambridge University Press:  15 February 2011

Christos Papavassiliou ,
G. Constantinidis ,
N. Kornilios ,
A. Georgakilas ,
E. LÖchterman  and
P. Panayotatos
Christos Papavassiliou
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
G. Constantinidis
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
N. Kornilios
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
A. Georgakilas
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
E. LÖchterman
Affiliation:
Freiberger Elektronikwerkstoffe GmbH, Freiberg/Sachsen, Germany
P. Panayotatos
Affiliation:
Rutgers U., Piscataway, NJ
Get access

Abstract

A systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 345
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fischer, R.J., Chand, N., Kopp, W.F., Peng, C.-K, Morkoç, H., Gleason, K.R. and Schleitlin, D., IEEE-TED 33, 206 (1986)Google Scholar
2. Ren, F., Chand, N., Gabrinski, P., Pearton, S.J., Wu, C.S., Urbanek, L.D., Fullowan, T., Shah, N. and Feuer, M.D., Electron. Lett. 24, 1037 (1988)Google Scholar
3. Georgakilas, A., Panayotatos, P., Stoemenos, J., Mourrain, J.-L. and Christou, A., J. Appl. Phys. 71, 2679 (1992).Google Scholar
4. Georgakilas, A., Stoemenos, J., Tsagaraki, K., Komninou, Ph., Flevaris, N., Panayotatos, P. and Christou, A., J. Material. Res. 8, 1908 (1993).Google Scholar
5. Georgakilas, A., Halkias, G., Christou, A., Papavassiliou, C., Perantinos, G., Constantinidis, G. and Panayotatos, P., IEEE TED 40, 507 (1993).Google Scholar
6. Löchterman, E., Krasny, H., ESPRIT 9500#19, PPR 2, 1993 Google Scholar
7. Ottsuka, N., Choi, C., Nakamura, Y., Nagakura, S., Fischer, R., Peng, C.K. and Morkoç, H., Appl. Phys. Lett. 49, 277 (1986)Google Scholar
8. Dambrine, G., Cappy, A., Heliodore, F. and Playez, Edouard, IEEE-MTT 36, 1151 (1988)Google Scholar
9. Homak, L.A., Tewksbury, S.K. and Nariman, H. E., presented at the 1993 SPIE Conference on Optoelctronics Interconnects Los Angeles CA. (Proceedings series vol. 1849, #10)Google Scholar