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Effects of Rare Earth Incorporation on the Ferroelectric and Dielectric Properties of Sol-Gel Derived PbTiO3 Films

Published online by Cambridge University Press:  21 February 2011

G. Teowee
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
C.D. Baertlein
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
S.A. Schlegel
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
J.M. Boulton
Affiliation:
Arizona Materials Laboratories, Dept. of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
D.R. Uhlmann
Affiliation:
Arizona Materials Laboratories, Dept. of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
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Abstract

Ferroelectric (FE) films, especially PZT films, have received increasing attention for microelectronics applications such as FE memory and in high density DRAM's. While rare earth doped PbTiO3 ceramics has been studied for SAW and piezoelectric applications, rare earth-doped films seldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths (such as, Nd, Sm, Tb, Dy, Er ,Yb and La ) have been prepared using acetates and alkoxides as precursors. The solutions were spin coated onto platinized Si wafers. The effects of the type and amount of rare incorporation on the phase assembly and microstructure have been quantified. The results of dielectric characterization (e.g., dielectric constant, dissipation factor and leakage currents) and FE behaviors (viz remanent polarization, and coercive field) are presented; these films exhibited low leakage currents (3E-10 A/cm2) and much higher dielectric constant (up to 525) compared to undoped PbTiO3 films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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