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Effects of Rapid Thermal Anneals on Boron Implanted GaAs

Published online by Cambridge University Press:  26 February 2011

R. C. Bowman Jr ,
P. M. Adams ,
M. H. Herman  and
S. E. Buttrill Jr
R. C. Bowman Jr
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
P. M. Adams
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
M. H. Herman
Affiliation:
Charles Evans and Associates, 301 Chesapeake Dr., Redwood City, CA 94063
S. E. Buttrill Jr
Affiliation:
Charles Evans and Associates, 301 Chesapeake Dr., Redwood City, CA 94063
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Abstract

Raman scattering, double-crystal x-ray diffraction, and electron beam electroreflectance have been used to assess the damage produced in undoped (100)-GaAs by boron ion implants and the influence of post-implant anneals. Both conventional furnace and rapid thermal annealing treatments were found to remove much of the lattice strain created by the implants. However, considerable disorder also remains after these anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 471
Copyright
Copyright © Materials Research Society 1989

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References

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